PNY Electronics PNY 2GB vs Kingston 9905744-077.A00G 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Kingston 9905744-077.A00G 16GB

Kingston 9905744-077.A00G 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 41

左右 34% 更低的延时

Kingston 9905744-077.A00G 16GB

需要考虑的原因
Kingston 9905744-077.A00G 16GB

报告一个错误

更快的读取速度，GB/s

15.6 13.8

测试中的平均数值
更快的写入速度，GB/s

11.2 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Kingston 9905744-077.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 41
读取速度，GB/s

13.8 15.6
写入速度，GB/s

8.4 11.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2274 2685

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

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SK Hynix HMA851S6DJR6N-XN 4GB

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Corsair CMV16GX4M1A2400C16 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Kingston ACR512X64D3S13C9G 4GB

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Corsair CMW64GX4M4E3200C16 16GB

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Kingston 9965525-018.A00LF 4GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB