RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA451R7MFR8N-TFTD 4GB

Samsung M393B1K70CH0-CH9 8GB vs SK Hynix HMA451R7MFR8N-TFTD 4GB

总分
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分
star star star star star
SK Hynix HMA451R7MFR8N-TFTD 4GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

差异 规格 评论

差异

Samsung M393B1K70CH0-CH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11.2 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 7.3
    测试中的平均数值
SK Hynix HMA451R7MFR8N-TFTD 4GB 需要考虑的原因
SK Hynix HMA451R7MFR8N-TFTD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 44
    左右 -10% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 40
  • 读取速度，GB/s
    11.2 left arrow 9.3
  • 写入速度，GB/s
    8.1 left arrow 7.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2293 left arrow 1773

Samsung M393B1K70CH0-CH9 8GB RAM的比较

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

SK Hynix HMA451R7MFR8N-TFTD 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
Samsung M378B1G73EB0-CK0 8GB
Samsung M378B1G73EB0-CK0 8GB
Samsung M378B1G73EB0-YK0 8GB
Samsung M378B1G73EB0-YK0 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Corsair CMK16GX4M2Z2666C16 8GB
Corsair CMK16GX4M2Z2666C16 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Corsair CMK16GX4M2E4333C19 8GB
Corsair CMK16GX4M2E4333C19 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hewlett-Packard 7EH61AA# 8GB
Hewlett-Packard 7EH61AA# 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
A-DATA Technology DDR4 4133 2OZ 8GB
A-DATA Technology DDR4 4133 2OZ 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Apacer Technology 78.B1GM3.AF00B 4GB
Apacer Technology 78.B1GM3.AF00B 4GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3000C15-8GRRB 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
内存RAM