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Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA84GR7JJR4N-VK 32GB

Samsung M393B1K70CH0-CH9 8GB vs SK Hynix HMA84GR7JJR4N-VK 32GB

总分
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分
star star star star star
SK Hynix HMA84GR7JJR4N-VK 32GB

SK Hynix HMA84GR7JJR4N-VK 32GB

差异 规格 评论

差异

Samsung M393B1K70CH0-CH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11.2 left arrow 10.8
    测试中的平均数值
SK Hynix HMA84GR7JJR4N-VK 32GB 需要考虑的原因
SK Hynix HMA84GR7JJR4N-VK 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 44
    左右 -38% 更低的延时
  • 更快的写入速度，GB/s
    8.3 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA84GR7JJR4N-VK 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 32
  • 读取速度，GB/s
    11.2 left arrow 10.8
  • 写入速度，GB/s
    8.1 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2293 left arrow 2318

Samsung M393B1K70CH0-CH9 8GB RAM的比较

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

SK Hynix HMA84GR7JJR4N-VK 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF2933C17S4/16G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA84GR7JJR4N-VK 32GB
SK Hynix HMA84GR7JJR4N-VK 32GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Corsair CM4X16GE2400C16S4 16GB
Corsair CM4X16GE2400C16S4 16GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905744-005.A00G 16GB
Kingston 9905744-005.A00G 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-3400C16-4GRBD 4GB
G Skill Intl F4-3400C16-4GRBD 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMW16GX4M2A2666C16 8GB
Corsair CMW16GX4M2A2666C16 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
内存RAM
Kingston 9905713-008.A00G 4GB
Kingston 9905713-008.A00G 4GB
Kingston 99U5471-036.A00LF 8GB
Kingston 99U5471-036.A00LF 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM