Samsung M393B1K70CH0-YH9 8GB vs Corsair CMK8GX4M1D2400C14 8GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

Corsair CMK8GX4M1D2400C14 8GB

Corsair CMK8GX4M1D2400C14 8GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

Corsair CMK8GX4M1D2400C14 8GB

需要考虑的原因
Corsair CMK8GX4M1D2400C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 49

左右 -104% 更低的延时
更快的读取速度，GB/s

15.7 10.1

测试中的平均数值
更快的写入速度，GB/s

9.3 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

Corsair CMK8GX4M1D2400C14 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 24
读取速度，GB/s

10.1 15.7
写入速度，GB/s

7.8 9.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 2581

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.B1GET.AU00C 4GB

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Samsung M391A1K43BB2-CTD 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Kingston 9965662-010.A00G 16GB

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Apacer Technology GD2.1527WT.001 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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V-Color Technology Inc. TL48G32S8RRGB16 8GB

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G Skill Intl F4-3600C19-16GSXK 16GB

G Skill Intl F4-3600C19-16GSXK 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

SK Hynix HMA82GU6DJR8N-XN 16GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Samsung M471A5244CB0-CWE 4GB

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Samsung M471B5273CH0-CH9 4GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB