Samsung M393B1K70CH0-YH9 8GB vs Crucial Technology CT8G4SFS6266.M4FB 8GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

Crucial Technology CT8G4SFS6266.M4FB 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

Crucial Technology CT8G4SFS6266.M4FB 8GB

需要考虑的原因
Crucial Technology CT8G4SFS6266.M4FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 49

左右 -36% 更低的延时
更快的读取速度，GB/s

17.1 10.1

测试中的平均数值
更快的写入速度，GB/s

12.6 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 36
读取速度，GB/s

10.1 17.1
写入速度，GB/s

7.8 12.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2070 2920

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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A-DATA Technology DQKD1A08 1GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB