Samsung M393B1K70CH0-YH9 8GB vs G Skill Intl F4-2800C16-8GRK 8GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

G Skill Intl F4-2800C16-8GRK 8GB

G Skill Intl F4-2800C16-8GRK 8GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

G Skill Intl F4-2800C16-8GRK 8GB

需要考虑的原因
G Skill Intl F4-2800C16-8GRK 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 49

左右 -26% 更低的延时
更快的读取速度，GB/s

14 10.1

测试中的平均数值
更快的写入速度，GB/s

10.5 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-2800C16-8GRK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 39
读取速度，GB/s

10.1 14.0
写入速度，GB/s

7.8 10.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 2834

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Kingston 99U5471-037.A00LF 8GB

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G Skill Intl F4-4000C15-8GVK 8GB

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Samsung M378B5673EH1-CF8 2GB

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Apacer Technology 78.CAGPP.40C0B 8GB

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Corsair CMWX8GD3600C18W2D 8GB

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Samsung M395T2863QZ4-CF76 1GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

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A-DATA Technology VDQVE1B16 2GB

V-GEN D4R8GL24A8R 8GB

V-GEN D4R8GL24A8R 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

Kingston 99U5403-036.A00G 4GB

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Micron Technology TEAMGROUP-UD4-2400 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Kllisre M378A1K43BB2-CRC 8GB

Kllisre M378A1K43BB2-CRC 8GB