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Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3600C16-8GVKC 8GB

Samsung M393B1K70CH0-YH9 8GB vs G Skill Intl F4-3600C16-8GVKC 8GB

总分
star star star star star
Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分
star star star star star
G Skill Intl F4-3600C16-8GVKC 8GB

G Skill Intl F4-3600C16-8GVKC 8GB

差异 规格 评论

差异

Samsung M393B1K70CH0-YH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB
报告一个错误
G Skill Intl F4-3600C16-8GVKC 8GB 需要考虑的原因
G Skill Intl F4-3600C16-8GVKC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 49
    左右 -88% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 26
  • 读取速度，GB/s
    10.1 left arrow 19.3
  • 写入速度，GB/s
    7.8 left arrow 16.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 3723

Samsung M393B1K70CH0-YH9 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB

G Skill Intl F4-3600C16-8GVKC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 99U5474-023.A00LF 4GB
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Crucial Technology BLS4G4D240FSA.8FBD 4GB
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内存RAM
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Corsair CMW32GX4M4Z3200C16 8GB
Corsair CMW32GX4M4Z3200C16 8GB
内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
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内存RAM
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内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
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内存RAM
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内存RAM
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Kingston 9905403-090.A01LF 4GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
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