Samsung M393B1K70CH0-YH9 8GB vs G Skill Intl F4-4266C17-16GTZRB 16GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

G Skill Intl F4-4266C17-16GTZRB 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

G Skill Intl F4-4266C17-16GTZRB 16GB

需要考虑的原因
G Skill Intl F4-4266C17-16GTZRB 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 49

左右 -113% 更低的延时
更快的读取速度，GB/s

22.4 10.1

测试中的平均数值
更快的写入速度，GB/s

20.1 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-4266C17-16GTZRB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 23
读取速度，GB/s

10.1 22.4
写入速度，GB/s

7.8 20.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 4421

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3200C14-8GFX 8GB

G Skill Intl F4-3200C14-8GFX 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMK64GX4M4B3600C18 16GB

Corsair CMK64GX4M4B3600C18 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Avant Technology J642GU42J7240N2 16GB

Avant Technology J642GU42J7240N2 16GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Roa Logic BV W4U2666CX1-8G 8GB

Roa Logic BV W4U2666CX1-8G 8GB

Samsung M3 78T5663FB3-CF7 2GB

Samsung M3 78T5663FB3-CF7 2GB

Essencore Limited IM44GU48N21-FFFHM 4GB

Essencore Limited IM44GU48N21-FFFHM 4GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-4266C17-16GTZRB 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston 9905700-072.A01G 16GB

Kingston 9905700-072.A01G 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston KHX2133C13S4/4G 4GB

Kingston KHX2133C13S4/4G 4GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CB4GU2400.M8E 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Golden Empire CL18-22-22 D4-3600 16GB

Golden Empire CL18-22-22 D4-3600 16GB