Samsung M393B1K70CH0-YH9 8GB vs InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

需要考虑的原因
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 49

左右 -123% 更低的延时
更快的读取速度，GB/s

17.2 10.1

测试中的平均数值
更快的写入速度，GB/s

13.0 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 22
读取速度，GB/s

10.1 17.2
写入速度，GB/s

7.8 13.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2070 3007

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5663-001.A00G 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMH16GX4M2Z3200C16 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB