Samsung M393B1K70CH0-YH9 8GB vs Kingston KGTWW1-MIE 4GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

Kingston KGTWW1-MIE 4GB

Kingston KGTWW1-MIE 4GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

低于PassMark测试中的延时，ns

49 97

左右 49% 更低的延时
更快的写入速度，GB/s

7.8 6.7

测试中的平均数值

Kingston KGTWW1-MIE 4GB

需要考虑的原因
Kingston KGTWW1-MIE 4GB

报告一个错误

更快的读取速度，GB/s

15.5 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

Kingston KGTWW1-MIE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 97
读取速度，GB/s

10.1 15.5
写入速度，GB/s

7.8 6.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2070 1479

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2400C16-4GRS 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Apacer Technology GD2.1527WH.002 8GB

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Corsair CMT32GX4M4Z3200C16 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Apacer Technology 78.CAGP7.C7C0B 8GB

Apacer Technology 78.CAGP7.C7C0B 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Kingston KF2666C16D4/8G 8GB

Kingston KF2666C16D4/8G 8GB

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

G Skill Intl F4-3200C14-16GTRG 16GB

G Skill Intl F4-3200C14-16GTRG 16GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

AMD R748G2400U2S-UO 8GB

AMD R748G2400U2S-UO 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

V-GEN D4H8GL32A8TS 8GB

V-GEN D4H8GL32A8TS 8GB