Samsung M393B1K70CH0-YH9 8GB vs V-GEN D4S4GL32A16TS 4GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

低于PassMark测试中的延时，ns

49 62

左右 21% 更低的延时
更快的写入速度，GB/s

7.8 7.4

测试中的平均数值

V-GEN D4S4GL32A16TS 4GB

需要考虑的原因
V-GEN D4S4GL32A16TS 4GB

报告一个错误

更快的读取速度，GB/s

15.9 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

V-GEN D4S4GL32A16TS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 62
读取速度，GB/s

10.1 15.9
写入速度，GB/s

7.8 7.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2070 1891

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMSA3320ME88HBF-3200 16GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Crucial Technology CT8G4DFD824A.M16FB 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Corsair CMSX8GX4M1A2400C16 8GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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G Skill Intl F4-3000C16-8GTZN 8GB

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Kingston 9905471-006.A01LF 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CM4X8GF2666C16K4 8GB

Corsair CM4X8GF2666C16K4 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3600C18-8GVK 8GB

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Kingston 9965525-018.A00LF 4GB

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G Skill Intl F4-2133C15-16GVR 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology AO2P26KC8T1-BC1S 8GB

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Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Crucial Technology CT16G4SFD8266 16GB

Crucial Technology CT16G4SFD8266 16GB