Samsung M393B1K70QB0-CK0 8GB vs Avant Technology J641GU48J5213NG 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Avant Technology J641GU48J5213NG 8GB

Avant Technology J641GU48J5213NG 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Avant Technology J641GU48J5213NG 8GB

需要考虑的原因
Avant Technology J641GU48J5213NG 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 47

左右 -68% 更低的延时
更快的读取速度，GB/s

14 10.4

测试中的平均数值
更快的写入速度，GB/s

10.3 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Avant Technology J641GU48J5213NG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 28
读取速度，GB/s

10.4 14.0
写入速度，GB/s

7.8 10.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 2310

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Neo Forza GKE160SO204808-3200 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

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SK Hynix HMA41GR7MFR4N-TF 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-4000C19-8GTZSW 8GB

G Skill Intl F4-4000C19-8GTZSW 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

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Avant Technology F6451U64F9333G 4GB

Corsair CMK32GX4M4B4000C19 8GB

Corsair CMK32GX4M4B4000C19 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Corsair CMK16GX4M2L3200C16 8GB

Corsair CMK16GX4M2L3200C16 8GB