Samsung M393B1K70QB0-CK0 8GB vs Corsair CM4X16GE2666C16K2 16GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Corsair CM4X16GE2666C16K2 16GB

Corsair CM4X16GE2666C16K2 16GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 54

左右 13% 更低的延时
更快的写入速度，GB/s

7.8 6.1

测试中的平均数值

Corsair CM4X16GE2666C16K2 16GB

需要考虑的原因
Corsair CM4X16GE2666C16K2 16GB

报告一个错误

更快的读取速度，GB/s

10.6 10.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Corsair CM4X16GE2666C16K2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 54
读取速度，GB/s

10.4 10.6
写入速度，GB/s

7.8 6.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 2091

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965525-018.A00LF 4GB

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G Skill Intl F4-3400C16-16GVK 16GB

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Kingston 9905471-002.A00LF 2GB

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Kingston 9965640-004.C00G 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kingston 9965669-018.A00G 16GB

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A-DATA Technology VDQVE1B16 2GB

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Apacer Technology 78.01GA0.9K5 1GB

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G Skill Intl F4-5066C20-8GVK 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Kingston 99U5584-004.A00LF 4GB

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Essencore Limited KD48GU881-26N190D 8GB

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Samsung 1600 CL10 Series 8GB

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Kingmax Semiconductor GSLF62F-D8---------- 4GB

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SpecTek Incorporated ?????????????????? 2GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

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Kingston KF2933C17S4/32G 32GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Golden Empire CL18-20-20 D4-3000 8GB