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Samsung M393B1K70QB0-CK0 8GB
Corsair CM4X16GE2933C19S2 16MB

Samsung M393B1K70QB0-CK0 8GB vs Corsair CM4X16GE2933C19S2 16MB

总分
star star star star star
Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分
star star star star star
Corsair CM4X16GE2933C19S2 16MB

Corsair CM4X16GE2933C19S2 16MB

差异 规格 评论

差异

Samsung M393B1K70QB0-CK0 8GB 需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB
报告一个错误
Corsair CM4X16GE2933C19S2 16MB 需要考虑的原因
Corsair CM4X16GE2933C19S2 16MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 47
    左右 -47% 更低的延时
  • 更快的读取速度，GB/s
    14.1 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 7.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M393B1K70QB0-CK0 8GB
Corsair CM4X16GE2933C19S2 16MB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 32
  • 读取速度，GB/s
    10.4 left arrow 14.1
  • 写入速度，GB/s
    7.8 left arrow 13.9
  • 内存带宽，mbps
    12800 left arrow no data
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow , 1.20000005, CAS Supported:
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    2169 left arrow 2918

Samsung M393B1K70QB0-CK0 8GB RAM的比较

V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB

Corsair CM4X16GE2933C19S2 16MB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CM4X16GE2933C19S2 16MB
Corsair CM4X16GE2933C19S2 16MB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3866C18-16GTZR 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
SK Hynix HMA81GU6DJR8N-VK 8GB
SK Hynix HMA81GU6DJR8N-VK 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4133C19-8GTZA 8GB
G Skill Intl F4-4133C19-8GTZA 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Essencore Limited IM48GU48A30-GIIHM 8GB
Essencore Limited IM48GU48A30-GIIHM 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
G Skill Intl F4-3200C16-16GTZKY 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2666C18-32GTZN 32GB
G Skill Intl F4-2666C18-32GTZN 32GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
A-DATA Technology DDR4 3333 2OZ 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905625-152.A00G 16GB
Kingston 9905625-152.A00G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
内存RAM