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Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT16G4SFD8266.16FE1 16GB

Samsung M393B1K70QB0-CK0 8GB vs Crucial Technology CT16G4SFD8266.16FE1 16GB

总分
star star star star star
Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分
star star star star star
Crucial Technology CT16G4SFD8266.16FE1 16GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

差异 规格 评论

差异

Samsung M393B1K70QB0-CK0 8GB 需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 53
    左右 11% 更低的延时
Crucial Technology CT16G4SFD8266.16FE1 16GB 需要考虑的原因
Crucial Technology CT16G4SFD8266.16FE1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 53
  • 读取速度，GB/s
    10.4 left arrow 15.6
  • 写入速度，GB/s
    7.8 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2169 left arrow 2755

Samsung M393B1K70QB0-CK0 8GB RAM的比较

V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB

Crucial Technology CT16G4SFD8266.16FE1 16GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
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SK Hynix HMT325S6BFR8C-H9 2GB
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G Skill Intl F4-2666C19-16GRS 16GB
内存RAM
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内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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内存RAM
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Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
内存RAM
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G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
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Samsung M471B5773DH0-CH9 2GB
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内存RAM
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Kingston SNY1600S11-4G-EDEG 4GB
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Corsair CMK32GX4M2A2400C14 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
内存RAM