Samsung M393B1K70QB0-CK0 8GB vs Crucial Technology CT8G4SFS6266.M4FB 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Crucial Technology CT8G4SFS6266.M4FB 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Crucial Technology CT8G4SFS6266.M4FB 8GB

需要考虑的原因
Crucial Technology CT8G4SFS6266.M4FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 47

左右 -31% 更低的延时
更快的读取速度，GB/s

17.1 10.4

测试中的平均数值
更快的写入速度，GB/s

12.6 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 36
读取速度，GB/s

10.4 17.1
写入速度，GB/s

7.8 12.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2169 2920

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64AZ-3G2E1 16GB

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King Tiger Technology Tigo-2400MHz-8G 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

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Wilk Elektronik S.A. IR2400D464L17S/8G 8GB

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SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

SK Hynix HMT325S6CFR8C-PB 2GB

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Micron Technology 18ASF2G72AZ-2G3B1 16GB

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Nanya Technology M2F4G64CB8HG5N-CG 4GB

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Kingston 9905403-447.A00LF 4GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB