Samsung M393B1K70QB0-CK0 8GB vs G Skill Intl F4-3600C17-4GTZ 4GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

G Skill Intl F4-3600C17-4GTZ 4GB

G Skill Intl F4-3600C17-4GTZ 4GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

G Skill Intl F4-3600C17-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-3600C17-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 47

左右 -114% 更低的延时
更快的读取速度，GB/s

21 10.4

测试中的平均数值
更快的写入速度，GB/s

17.7 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3600C17-4GTZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 22
读取速度，GB/s

10.4 21.0
写入速度，GB/s

7.8 17.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 3987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

G Skill Intl F4-4400C17-16GTZR 16GB

G Skill Intl F4-4400C17-16GTZR 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston XN205T-MIE 16GB

Kingston XN205T-MIE 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingston 9905403-003.B00LF 4GB

Kingston 9905403-003.B00LF 4GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

KingSpec KingSpec 16GB

KingSpec KingSpec 16GB

SK Hynix HMT451S6AFR8A-PB 4GB

SK Hynix HMT451S6AFR8A-PB 4GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Transcend Information JM3200HLB-16G 16GB

Transcend Information JM3200HLB-16G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB