Samsung M393B1K70QB0-CK0 8GB vs G Skill Intl F4-4000C15-8GTZR 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

G Skill Intl F4-4000C15-8GTZR 8GB

G Skill Intl F4-4000C15-8GTZR 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

G Skill Intl F4-4000C15-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4000C15-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 47

左右 -88% 更低的延时
更快的读取速度，GB/s

20 10.4

测试中的平均数值
更快的写入速度，GB/s

19.2 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-4000C15-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 25
读取速度，GB/s

10.4 20.0
写入速度，GB/s

7.8 19.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 4243

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Samsung M393B1G70BH0-YK0 8GB

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Apacer Technology 78.CAGPW.40C0B 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

G Skill Intl F4-3200C16-4GVK 4GB

G Skill Intl F4-3200C16-4GVK 4GB

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Corsair CMD16GX3M2A1866C9 8GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-2133C15-16GFT 16GB

G Skill Intl F4-2133C15-16GFT 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMWB8G1L2666A16W4 8GB

Corsair CMWB8G1L2666A16W4 8GB