Samsung M393B1K70QB0-CK0 8GB vs Kingston CBD26D4S9D8ME-16 16GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Kingston CBD26D4S9D8ME-16 16GB

Kingston CBD26D4S9D8ME-16 16GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Kingston CBD26D4S9D8ME-16 16GB

需要考虑的原因
Kingston CBD26D4S9D8ME-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 47

左右 -47% 更低的延时
更快的读取速度，GB/s

15.5 10.4

测试中的平均数值
更快的写入速度，GB/s

9.1 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Kingston CBD26D4S9D8ME-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 32
读取速度，GB/s

10.4 15.5
写入速度，GB/s

7.8 9.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2169 2612

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SpecTek Incorporated ?????????????????? 2GB

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GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

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Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

G Skill Intl F4-2666C15-4GRR 4GB

G Skill Intl F4-2666C15-4GRR 4GB

Samsung M393B5170FH0-CK0 4GB

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Corsair CM4X16GE2666C16K2 16GB

Corsair CM4X16GE2666C16K2 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Asgard VMA44UI-MEC1U2AW2 32GB

Asgard VMA44UI-MEC1U2AW2 32GB