Samsung M393B1K70QB0-CK0 8GB vs Kingston KHX3466C19D4/16G 16GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Kingston KHX3466C19D4/16G 16GB

Kingston KHX3466C19D4/16G 16GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Kingston KHX3466C19D4/16G 16GB

需要考虑的原因
Kingston KHX3466C19D4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 47

左右 -88% 更低的延时
更快的读取速度，GB/s

17.6 10.4

测试中的平均数值
更快的写入速度，GB/s

13.7 7.8

测试中的平均数值
更高的内存带宽，mbps

27700 12800

左右 2.16 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Kingston KHX3466C19D4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 25
读取速度，GB/s

10.4 17.6
写入速度，GB/s

7.8 13.7
内存带宽，mbps

12800 27700

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-27700, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz no data
排名PassMark (越多越好)

2169 3542

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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Micron Technology 8KTF51264AZ-1G6E1 4GB

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Apacer Technology 78.01GA0.9K5 1GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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A-DATA Technology AO1P26KCST2-BWWS 16GB

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SK Hynix HMA84GR7MFR4N-TF 32GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Corsair CMWX16GC3000C16W4D 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905625-029.A00G 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston ACR24D4S7S8MB-8 8GB

Kingston ACR24D4S7S8MB-8 8GB

AMD R538G1601U2S 8GB

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Kingston ACR16D3LS1KNG/8G 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB