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Samsung M393B1K70QB0-CK0 8GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB

Samsung M393B1K70QB0-CK0 8GB vs Micron Technology 36ASF4G72LZ-2G3A1 32GB

总分
star star star star star
Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分
star star star star star
Micron Technology 36ASF4G72LZ-2G3A1 32GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

差异 规格 评论

差异

Samsung M393B1K70QB0-CK0 8GB 需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB
报告一个错误
Micron Technology 36ASF4G72LZ-2G3A1 32GB 需要考虑的原因
Micron Technology 36ASF4G72LZ-2G3A1 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 47
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    11.2 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 33
  • 读取速度，GB/s
    10.4 left arrow 11.2
  • 写入速度，GB/s
    7.8 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2169 left arrow 2284

Samsung M393B1K70QB0-CK0 8GB RAM的比较

V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
内存RAM
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
G Skill Intl F4-3200C14-16GTZR 16GB
G Skill Intl F4-3200C14-16GTZR 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Chun Well Technology Holding Limited D4U0832161B 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Apacer Technology 78.C1GM3.C7Z0C 8GB
Apacer Technology 78.C1GM3.C7Z0C 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingston 9905678-065.A00G 8GB
Kingston 9905678-065.A00G 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Samsung M378A1K43CB2-CTD 8GB
Samsung M378A1K43CB2-CTD 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Golden Empire CL16-16-16 D4-2400 8GB
Golden Empire CL16-16-16 D4-2400 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
SK Hynix HMA81GU7CJR8N-VK 8GB
SK Hynix HMA81GU7CJR8N-VK 8GB
内存RAM