Samsung M393B1K70QB0-CK0 8GB vs SanMax Technologies Inc. SMD-8G28HP-21P 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

需要考虑的原因
SanMax Technologies Inc. SMD-8G28HP-21P 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 47

左右 -74% 更低的延时
更快的读取速度，GB/s

13.8 10.4

测试中的平均数值
更快的写入速度，GB/s

10.3 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 27
读取速度，GB/s

10.4 13.8
写入速度，GB/s

7.8 10.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 2140

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Wilk Elektronik S.A. GR3200D464L22/16G 16GB

Wilk Elektronik S.A. GR3200D464L22/16G 16GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

AMD R744G2133U1S 4GB

AMD R744G2133U1S 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston 9965669-009.A00G 8GB

Kingston 9965669-009.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston 9905702-184.A00G 8GB

Kingston 9905702-184.A00G 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Kingston 9905630-033.A00G 16GB

Kingston 9905630-033.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Asgard VMA44UI-MEC1U2AW2 32GB

Asgard VMA44UI-MEC1U2AW2 32GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingston 9905630-066.A00G 16GB

Kingston 9905630-066.A00G 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3200C14-8GTZ 8GB

G Skill Intl F4-3200C14-8GTZ 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB