Samsung M393B1K70QB0-CK0 8GB vs Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 72

左右 35% 更低的延时

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

需要考虑的原因
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

报告一个错误

更快的读取速度，GB/s

15.3 10.4

测试中的平均数值
更快的写入速度，GB/s

8.0 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 72
读取速度，GB/s

10.4 15.3
写入速度，GB/s

7.8 8.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2169 1593

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Avant Technology J644GU44J9266NQ 32GB

Avant Technology J644GU44J9266NQ 32GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Corsair CMD32GX4M4C3200C14T 8GB

Corsair CMD32GX4M4C3200C14T 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9905663-012.A00G 16GB

Kingston 9905663-012.A00G 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Corsair CMU32GX4M2A2666C16 16GB

Corsair CMU32GX4M2A2666C16 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Kingston 9905624-036.A00G 8GB

Kingston 9905624-036.A00G 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology AFLD48EH1P 8GB

Micron Technology AFLD48EH1P 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CM4B8G2J2400A14K 8GB

Corsair CM4B8G2J2400A14K 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F4-2133C15-8GVK 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Avant Technology W641GU67J7240N8 8GB

Avant Technology W641GU67J7240N8 8GB