Samsung M393B1K70QB0-CK0 8GB vs SK Hynix HMA851U6CJR6N-UH 4GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

SK Hynix HMA851U6CJR6N-UH 4GB

SK Hynix HMA851U6CJR6N-UH 4GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

SK Hynix HMA851U6CJR6N-UH 4GB

需要考虑的原因
SK Hynix HMA851U6CJR6N-UH 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 47

左右 -27% 更低的延时
更快的读取速度，GB/s

15.6 10.4

测试中的平均数值
更快的写入速度，GB/s

12.0 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

SK Hynix HMA851U6CJR6N-UH 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 37
读取速度，GB/s

10.4 15.6
写入速度，GB/s

7.8 12.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2169 2314

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 72ASS4G72LZ-2G1A1 32GB

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Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-2133C15-8GIS 8GB

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Samsung M393B5270CH0-CH9 4GB

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G Skill Intl F4-3600C16-32GVK 32GB

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Crucial Technology CB8GU2400.C8D 8GB

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Samsung M393B2G70BH0-CK0 16GB

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SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905713-001.A00G 4GB

Kingston 9905713-001.A00G 4GB

Samsung M378B5173BH0-CH9 4GB

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Ramaxel Technology RMSA3310ME96HAF-3200 8GB

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Mushkin 996902 2GB

Mushkin 996902 2GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Corsair CMK32GX4M4K3600C16 8GB

Corsair CMK32GX4M4K3600C16 8GB