Samsung M393B2G70AH0-YH9 16GB vs Century Micro Inc. CENTURY JAPAN MEMORY 8GB

总分

Samsung M393B2G70AH0-YH9 16GB

Samsung M393B2G70AH0-YH9 16GB

总分

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

差异规格评论

差异

Samsung M393B2G70AH0-YH9 16GB

需要考虑的原因
Samsung M393B2G70AH0-YH9 16GB

报告一个错误

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

需要考虑的原因
Century Micro Inc. CENTURY JAPAN MEMORY 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 55

左右 -53% 更低的延时
更快的读取速度，GB/s

16 9.4

测试中的平均数值
更快的写入速度，GB/s

13.2 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70AH0-YH9 16GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

55 36
读取速度，GB/s

9.4 16.0
写入速度，GB/s

7.8 13.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2424 3313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

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Corsair CMZ16GX3M2A1866C9 8GB

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Apacer Technology 76.D305G.D060B 16GB

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SK Hynix HMA81GS6DJR8N-XN 8GB

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Peak Electronics 256X64M-67E 2GB

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Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Hewlett-Packard 7EH64AA# 8GB

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JUHOR JHD2666U1908JG 8GB

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