RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70AH0-YH9 16GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Compare
Samsung M393B2G70AH0-YH9 16GB vs Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Overall score
Samsung M393B2G70AH0-YH9 16GB
Overall score
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70AH0-YH9 16GB
Report a bug
Reasons to consider
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
55
Around -53% lower latency
Faster reading speed, GB/s
16
9.4
Average value in the tests
Faster write speed, GB/s
13.2
7.8
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70AH0-YH9 16GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
55
36
Read speed, GB/s
9.4
16.0
Write speed, GB/s
7.8
13.2
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2424
3313
Samsung M393B2G70AH0-YH9 16GB RAM comparisons
Samsung M393B2G70BH0-YH9 16GB
Corsair CMG64GX4M2D3600C18 32GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
Samsung M378T5663QZ3-CF7 2GB
Corsair CMK8GX4M1Z3600C18 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Transcend Information TS2GLH64V1B 16GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-4266C19-8GTZA 8GB
Unifosa Corporation HU564404EP0200 4GB
Kingston X0N6VG-HYD2 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Kingston KHX1600C9S3L/4G 4GB
Corsair CMU32GX4M4C3400C16 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9965662-004.A00G 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-3200C14-8GTZ 8GB
AMD AE34G1601U1 4GB
Micron Technology 9905625-004.A03LF 8GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BL8G30C15U4R.8FE 8GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3200C18-8GRS 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-2133C15-4GVR 4GB
Report a bug
×
Bug description
Source link