Samsung M393B2G70BH0-CH9 16GB vs Avant Technology W642GU42J5213N 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Avant Technology W642GU42J5213N 16GB

Avant Technology W642GU42J5213N 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Avant Technology W642GU42J5213N 16GB

需要考虑的原因
Avant Technology W642GU42J5213N 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 33

左右 -43% 更低的延时
更快的读取速度，GB/s

18.3 8

测试中的平均数值
更快的写入速度，GB/s

13.7 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Avant Technology W642GU42J5213N 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 23
读取速度，GB/s

8.0 18.3
写入速度，GB/s

7.3 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 3152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905678-058.A00G 4GB

Kingston 9905678-058.A00G 4GB

Samsung M378B5673EH1-CF8 2GB

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SK Hynix HMA81GU7CJR8N-VK 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Avant Technology W642GU42J5213N 16GB

Avant Technology W642GU42J5213N 16GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Kingston 9905624-008.A00G 8GB

Kingston 9905624-008.A00G 8GB

Samsung M393B1K70QB0-CK0 8GB

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King Tiger Technology TMKG8G3000C17(XMP) 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Crucial Technology CT8G4DFS824A.C8FE 8GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

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Crucial Technology CT32G4SFD8266.C16FB 32GB

Crucial Technology CT32G4SFD8266.C16FB 32GB

Samsung M378A5244CB0-CTD 4GB

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Crucial Technology CT4G4DFS8266.M8FE 4GB

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A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT8G4DFD824A.C16FHP 8GB

Crucial Technology CT8G4DFD824A.C16FHP 8GB