Samsung M393B2G70BH0-CH9 16GB vs Corsair CMR32GX4M2C3333C16 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Corsair CMR32GX4M2C3333C16 16GB

Corsair CMR32GX4M2C3333C16 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Corsair CMR32GX4M2C3333C16 16GB

需要考虑的原因
Corsair CMR32GX4M2C3333C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 33

左右 -38% 更低的延时
更快的读取速度，GB/s

19.8 8

测试中的平均数值
更快的写入速度，GB/s

16.2 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Corsair CMR32GX4M2C3333C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 24
读取速度，GB/s

8.0 19.8
写入速度，GB/s

7.3 16.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 4005

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905665-017.A00G 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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SK Hynix HMA41GU7AFR8N-TF 8GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingston KHX2133C14D4/4G 4GB

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Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-4000C19-8GTZKW 8GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB