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Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
比较
Samsung M393B2G70BH0-CH9 16GB vs Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Samsung M393B2G70BH0-CH9 16GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
33
左右 -14% 更低的延时
更快的读取速度,GB/s
16.9
8
测试中的平均数值
更快的写入速度,GB/s
12.0
7.3
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
33
29
读取速度,GB/s
8.0
16.9
写入速度,GB/s
7.3
12.0
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1911
2601
Samsung M393B2G70BH0-CH9 16GB RAM的比较
Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMW64GX4M2D3600C18 32GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Samsung M393B1G70BH0-YK0 8GB
Kingston KHX2400C1C14/16G 16GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Corsair CMW64GX4M2D3600C18 32GB
G Skill Intl F5-6400J3239G16G 16GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2133C15-8GFT 8GB
Corsair CMZ16GX3M2A1866C9 8GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
Kingston 9965525-140.A00LF 8GB
Corsair CMD64GX4M8A2800C16 8GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CM4X16GF3200C22S2 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64HZ-2G1A1 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Samsung M471B5673FH0-CF8 2GB
InnoDisk Corporation 16GB
AMD R5S38G1601U2S 8GB
Kingston KHX2933C17S4/16G 16GB
报告一个错误
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Bug description
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