Samsung M393B2G70BH0-CH9 16GB vs Crucial Technology CT16G4S24AM.M16FE 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Crucial Technology CT16G4S24AM.M16FE 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Crucial Technology CT16G4S24AM.M16FE 16GB

需要考虑的原因
Crucial Technology CT16G4S24AM.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 33

左右 -43% 更低的延时
更快的读取速度，GB/s

16.9 8

测试中的平均数值
更快的写入速度，GB/s

13.9 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 23
读取速度，GB/s

8.0 16.9
写入速度，GB/s

7.3 13.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1911 3081

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5474-010.A00LF 2GB

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Smart Modular SF4721G8CKHH6DFSDS 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Crucial Technology CT8G4DFD8213.C16FAR1 8GB

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Samsung M391A1K43BB2-CTD 8GB

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Micron Technology HMA81GU6AFR8N-UH 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Corsair CMK8GX4M1E3200C16 8GB

Corsair CMK8GX4M1E3200C16 8GB