Samsung M393B2G70BH0-CH9 16GB vs Crucial Technology CT8G4DFS8213.C8FBD1 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FBD1 8GB

报告一个错误

更快的读取速度，GB/s

14.5 8

测试中的平均数值
更快的写入速度，GB/s

9.5 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 33
读取速度，GB/s

8.0 14.5
写入速度，GB/s

7.3 9.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 2543

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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A-DATA Technology AO2P21FC4R1-BRFS 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology BLS8G4D240FSB.M16FBD 8GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston KF3200C16D4/32GX 32GB

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SK Hynix HMA41GR7MFR4N-TF 8GB

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Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

G Skill Intl F4-3600C17-16GTZKW 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB

ASint Technology SSA302G08-EGN1C 4GB

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Smart Modular SH564128FH8N0QHSCG 4GB

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Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB