Samsung M393B2G70BH0-CH9 16GB vs G Skill Intl F4-3733C17-8GTZSW 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

G Skill Intl F4-3733C17-8GTZSW 8GB

G Skill Intl F4-3733C17-8GTZSW 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

G Skill Intl F4-3733C17-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3733C17-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 33

左右 -57% 更低的延时
更快的读取速度，GB/s

21.4 8

测试中的平均数值
更快的写入速度，GB/s

17.6 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3733C17-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 21
读取速度，GB/s

8.0 21.4
写入速度，GB/s

7.3 17.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 3954

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT42GR7AFR4A-PB 16GB

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G Skill Intl F4-2400C14-4GRK 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

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PUSKILL DDR3 1600 8G 8GB

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Corsair CMD16GX4M4A2666C15 4GB

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Kingston 99U5403-465.A00LF 8GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

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Kingston 9905403-447.A00LF 4GB

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Crucial Technology BL16G36C16U4BL.M16FE 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

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G Skill Intl F3-2400C11-8GSR 8GB

Samsung M471A1K1KBB1-CRC 8GB

Samsung M471A1K1KBB1-CRC 8GB