Samsung M393B2G70BH0-CH9 16GB vs Heoriady HX2666DT8G-TD 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 39

左右 15% 更低的延时

Heoriady HX2666DT8G-TD 8GB

需要考虑的原因
Heoriady HX2666DT8G-TD 8GB

报告一个错误

更快的读取速度，GB/s

14.6 8

测试中的平均数值
更快的写入速度，GB/s

10.1 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Heoriady HX2666DT8G-TD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 39
读取速度，GB/s

8.0 14.6
写入速度，GB/s

7.3 10.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1911 2513

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

G Skill Intl F4-2933C14-16GFX 16GB

G Skill Intl F4-2933C14-16GFX 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Kingston 9965600-033.A00G 16GB

Kingston 9965600-033.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3600C17-8GVK 8GB

G Skill Intl F4-3600C17-8GVK 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Samsung M471A1K1KBB0-CPB 8GB

Samsung M471A1K1KBB0-CPB 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Apacer Technology 78.B1GM3.C7W0B 4GB

Apacer Technology 78.B1GM3.C7W0B 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905702-029.A00G 8GB

Kingston 9905702-029.A00G 8GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-4000C19-16GTRS 16GB

G Skill Intl F4-4000C19-16GTRS 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Smart Modular SF464128CK8I6GKSEG 4GB

Smart Modular SF464128CK8I6GKSEG 4GB