Samsung M393B2G70BH0-CH9 16GB vs Kingston 9905700-072.A01G 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Kingston 9905700-072.A01G 16GB

Kingston 9905700-072.A01G 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 40

左右 18% 更低的延时

Kingston 9905700-072.A01G 16GB

需要考虑的原因
Kingston 9905700-072.A01G 16GB

报告一个错误

更快的读取速度，GB/s

16.6 8

测试中的平均数值
更快的写入速度，GB/s

14.4 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Kingston 9905700-072.A01G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 40
读取速度，GB/s

8.0 16.6
写入速度，GB/s

7.3 14.4
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1911 3038

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5273DH0-CK0 4GB

Kllisre 0000 8GB

Kllisre 0000 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Kingston 9905624-008.A00G 8GB

Kingston 9905624-008.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

SK Hynix HMT351S6AFR8C-G7 4GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Crucial Technology CT4G4DFS8213.C8FBD1 4GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston 9965600-005.A00G 16GB

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Infineon (Siemens) 64T32000HU3.7A 256MB

Infineon (Siemens) 64T32000HU3.7A 256MB

Crucial Technology CB16GS2666.C8ET 16GB

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Samsung M393B5170FH0-CH9 4GB

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Corsair CMK16GX4M2B3200C14 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston KTD3KX-HYA 8GB

Kingston KTD3KX-HYA 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Essencore Limited KD4AGU880-32A160T 16GB

Essencore Limited KD4AGU880-32A160T 16GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Crucial Technology RM51264BA1339.16FR 4GB

Crucial Technology RM51264BA1339.16FR 4GB

G Skill Intl F4-3600C18-8GVK 8GB

G Skill Intl F4-3600C18-8GVK 8GB