Samsung M393B2G70BH0-CH9 16GB vs Kingston 99U5700-014.A00G 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Kingston 99U5700-014.A00G 8GB

Kingston 99U5700-014.A00G 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 11% 更低的延时

Kingston 99U5700-014.A00G 8GB

需要考虑的原因
Kingston 99U5700-014.A00G 8GB

报告一个错误

更快的读取速度，GB/s

16.1 8

测试中的平均数值
更快的写入速度，GB/s

12.7 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Kingston 99U5700-014.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 37
读取速度，GB/s

8.0 16.1
写入速度，GB/s

7.3 12.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1911 2848

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905702-029.A00G 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston KHX318C10FR/8G 8GB

Ramaxel Technology RMSA3260MH78HAF-2666 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

Corsair CMD32GX4M2C3200C14T 16GB

Corsair CMD32GX4M2C3200C14T 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Mushkin MR[A/B]4U300JJJM8G 8GB

Mushkin MR[A/B]4U300JJJM8G 8GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Apacer Technology GD2.2229BH.001 16GB

Apacer Technology GD2.2229BH.001 16GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Kingston MSI24D4S7S8S8-8 8GB

Kingston MSI24D4S7S8S8-8 8GB