Samsung M393B2G70BH0-CH9 16GB vs Kingston RB24D4U7S8MB-8 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Kingston RB24D4U7S8MB-8 8GB

需要考虑的原因
Kingston RB24D4U7S8MB-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 33

左右 -43% 更低的延时
更快的读取速度，GB/s

17.3 8

测试中的平均数值
更快的写入速度，GB/s

12.3 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Kingston RB24D4U7S8MB-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 23
读取速度，GB/s

8.0 17.3
写入速度，GB/s

7.3 12.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1911 2979

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1K43EB2-CWE 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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AMD R538G1601U2S 8GB

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A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

Samsung M3 78T2953EZ3-CF7 1GB

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Kingston 9905663-005.A00G 16GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3466C16-16GTZ 16GB