Samsung M393B2G70BH0-CH9 16GB vs Patriot Memory (PDP Systems) PSD416G21332S 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

Patriot Memory (PDP Systems) PSD416G21332S 16GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD416G21332S 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 33

左右 -10% 更低的延时
更快的读取速度，GB/s

10.3 8

测试中的平均数值
更快的写入速度，GB/s

9.5 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 30
读取速度，GB/s

8.0 10.3
写入速度，GB/s

7.3 9.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 1651

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M2B3600C18 8GB

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ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

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Kingston 99U5474-013.A00LF 2GB

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Samsung M391A2K43BB1-CTD 16GB