Samsung M393B2G70BH0-CH9 16GB vs Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 39

左右 15% 更低的延时

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

需要考虑的原因
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

报告一个错误

更快的读取速度，GB/s

14.8 8

测试中的平均数值
更快的写入速度，GB/s

12.3 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 39
读取速度，GB/s

8.0 14.8
写入速度，GB/s

7.3 12.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1911 2188

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4SFS8213.C8FHP 4GB

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Samsung 18ASF1G72PDZ-2G1B1 16GB

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SK Hynix HMA851S6CJR6N-UH 4GB

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Kingston 99U5403-036.A00G 4GB

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Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Kingston 9905744-062.A00G 32GB

Kingston 9905744-062.A00G 32GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology BLS8G4D26BFSB.16FE 8GB

Crucial Technology BLS8G4D26BFSB.16FE 8GB

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A-DATA Technology AM2P24HC8T1-BBFS 8GB

A-DATA Technology AM2P24HC8T1-BBFS 8GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

G Skill Intl F4-3400C16-8GVK 8GB

G Skill Intl F4-3400C16-8GVK 8GB