Samsung M393B2G70BH0-CH9 16GB vs SK Hynix HMA81GR7AFR8N-UH 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 57

左右 42% 更低的延时

SK Hynix HMA81GR7AFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GR7AFR8N-UH 8GB

报告一个错误

更快的读取速度，GB/s

9.4 8

测试中的平均数值
更快的写入速度，GB/s

7.6 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

SK Hynix HMA81GR7AFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 57
读取速度，GB/s

8.0 9.4
写入速度，GB/s

7.3 7.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1911 2170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G24C16U4B.8FB 8GB

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Samsung M393B2G70BH0-CH9 16GB

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SK Hynix HMA81GR7AFR8N-UH 8GB

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Crucial Technology CT16G4DFD8213.16FDD1 16GB

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Patriot Memory (PDP Systems) PSD34G133381 4GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

A-DATA Technology AM1P24HC8T1-BBJS 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Apacer Technology 78.B1GS6.AUC0B 4GB

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Kingston 9905458-017.A01LF 4GB

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SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB