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Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB

Samsung M393B2G70BH0-YK0 16GB vs Crucial Technology BL16G30C15U4R.M16FE1 16GB

总分
star star star star star
Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分
star star star star star
Crucial Technology BL16G30C15U4R.M16FE1 16GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-YK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB
报告一个错误
Crucial Technology BL16G30C15U4R.M16FE1 16GB 需要考虑的原因
Crucial Technology BL16G30C15U4R.M16FE1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 63
    左右 -110% 更低的延时
  • 更快的读取速度，GB/s
    20.8 left arrow 8.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 30
  • 读取速度，GB/s
    8.1 left arrow 20.8
  • 写入速度，GB/s
    7.5 left arrow 16.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1945 left arrow 3703

Samsung M393B2G70BH0-YK0 16GB RAM的比较

Samsung M393B2G70DB0-YK0 16GB
Samsung M392B1K70CM0-YH9 8GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Corsair CMT32GX4M2C3600C18 16GB
Corsair CMT32GX4M2C3600C18 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Samsung M471A1K43CBCBCRC 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-4133C19-8GTZC 8GB
G Skill Intl F4-4133C19-8GTZC 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
OCMEMORY OCM2933CL16-16GBH 16GB
OCMEMORY OCM2933CL16-16GBH 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMR32GX4M4A2666C16 8GB
Corsair CMR32GX4M4A2666C16 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
内存RAM
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Kingston KF2666C15S4/8G 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Samsung M474A1G43EB1-CRC 8GB
Samsung M474A1G43EB1-CRC 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
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Micron Technology 16ATF1G64HZ-2G1A2 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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Corsair CMU32GX4M2D3200C16 16GB
内存RAM
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Kingston 99U5403-036.A00G 4GB
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G Skill Intl F4-2400C16-8GRSB 8GB
内存RAM
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SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
内存RAM