Crucial Technology BLS8G3N169ES4.16FE 8GB vs Corsair CMT32GX4M2C3600C18 16GB

总分

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

总分

Corsair CMT32GX4M2C3600C18 16GB

Corsair CMT32GX4M2C3600C18 16GB

差异规格评论

差异

Crucial Technology BLS8G3N169ES4.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G3N169ES4.16FE 8GB

报告一个错误

Corsair CMT32GX4M2C3600C18 16GB

需要考虑的原因
Corsair CMT32GX4M2C3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时
更快的读取速度，GB/s

17.8 13.3

测试中的平均数值
更快的写入速度，GB/s

16.9 8.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS8G3N169ES4.16FE 8GB

Corsair CMT32GX4M2C3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 28
读取速度，GB/s

13.3 17.8
写入速度，GB/s

8.8 16.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2394 3898

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5273CH0-CH9 4GB

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Corsair CM4X4GD3000C16K2 4GB

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Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Corsair CMT32GX4M2C3600C18 16GB

Corsair CMT32GX4M2C3600C18 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

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V-Color Technology Inc. TL48G32S8KGRGB16 8GB

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G Skill Intl F4-3200C15-16GVK 16GB