G Skill Intl F3-14900CL8-4GBXM 4GB vs G Skill Intl F4-3200C15-16GVK 16GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

G Skill Intl F4-3200C15-16GVK 16GB

G Skill Intl F4-3200C15-16GVK 16GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 34

左右 9% 更低的延时
更快的读取速度，GB/s

17.4 14.9

测试中的平均数值

G Skill Intl F4-3200C15-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GVK 16GB

报告一个错误

更快的写入速度，GB/s

12.6 10.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3200C15-16GVK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 34
读取速度，GB/s

17.4 14.9
写入速度，GB/s

10.9 12.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2735 3206

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3200C15-16GVK 16GB

G Skill Intl F4-3200C15-16GVK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF1G64HZ-2G6E3 8GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-3600C18-32GVK 32GB

G Skill Intl F4-3600C18-32GVK 32GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Kingston 8ATF1G64AZ-2G3A1 8GB

Kingston 8ATF1G64AZ-2G3A1 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Micron Technology 8ATF51264HZ-2G1B1 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT4G4DFS8213.C8FAR2 4GB

Crucial Technology CT4G4DFS8213.C8FAR2 4GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB