Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology BLS8G4D30CESTK.8FD 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时

Crucial Technology BLS8G4D30CESTK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D30CESTK.8FD 8GB

报告一个错误

更快的读取速度，GB/s

16 12.9

测试中的平均数值
更快的写入速度，GB/s

13.3 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

12.9 16.0
写入速度，GB/s

9.0 13.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 3238

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D30CESTK.8FD 8GB

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Apacer Technology 78.CAGP7.AFW0C 8GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Hyundai Inc AR32C16S8K2SU416R 8GB

Hyundai Inc AR32C16S8K2SU416R 8GB