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Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB

Samsung M393B2G70BH0-YK0 16GB vs Crucial Technology BLS8G4D240FSA.16FAD 8GB

总分
star star star star star
Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分
star star star star star
Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-YK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB
报告一个错误
Crucial Technology BLS8G4D240FSA.16FAD 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FAD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 63
    左右 -75% 更低的延时
  • 更快的读取速度，GB/s
    13.6 left arrow 8.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 36
  • 读取速度，GB/s
    8.1 left arrow 13.6
  • 写入速度，GB/s
    7.5 left arrow 10.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1945 left arrow 2690

Samsung M393B2G70BH0-YK0 16GB RAM的比较

Samsung M393B2G70DB0-YK0 16GB
Samsung M392B1K70CM0-YH9 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C16-8GTZKK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965589-024.D01G 16GB
Kingston 9965589-024.D01G 16GB
内存RAM
Kingston ACR32D4S2S1ME-8 8GB
Kingston ACR32D4S2S1ME-8 8GB
Kingston ACR26D4S9S8ME-8 8GB
Kingston ACR26D4S9S8ME-8 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-2133C15-8GSQ 8GB
G Skill Intl F4-2133C15-8GSQ 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
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Apacer Technology 78.BAGP4.AR50C 4GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Kingston 99U5678-029.A00G 8GB
Kingston 99U5678-029.A00G 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston KHX2800C14D4/4GX 4GB
Kingston KHX2800C14D4/4GX 4GB
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Kingston KY7N41-MID 8GB
Kingston KY7N41-MID 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3200C16-4GVK 4GB
G Skill Intl F4-3200C16-4GVK 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Heoriady M471A1K43BB1-CRC 16GB
Heoriady M471A1K43BB1-CRC 16GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Apacer Technology 78.BAGM6.40C0B 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
内存RAM