Samsung M393B2G70BH0-YK0 16GB vs Crucial Technology CT8G4SFRA266.M8FJ 8GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

Crucial Technology CT8G4SFRA266.M8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4SFRA266.M8FJ 8GB

报告一个错误

低于PassMark测试中的延时，ns

42 63

左右 -50% 更低的延时
更快的读取速度，GB/s

14.5 8.1

测试中的平均数值
更快的写入速度，GB/s

13.5 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 42
读取速度，GB/s

8.1 14.5
写入速度，GB/s

7.5 13.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1945 2750

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

UMAX Technology 16GB

UMAX Technology 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology BL8G32C16U4RL.M8FE 8GB

Crucial Technology BL8G32C16U4RL.M8FE 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

Kingston ACR21D4S15HAG/8G 8GB

Kingston ACR21D4S15HAG/8G 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-2400C16-8GIS 8GB

G Skill Intl F4-2400C16-8GIS 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Corsair CMW32GX4M4D3600C16 8GB

Corsair CMW32GX4M4D3600C16 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

V-Color Technology Inc. TL48G26S8KRRGB16 8GB

V-Color Technology Inc. TL48G26S8KRRGB16 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB