Samsung M393B2G70BH0-YK0 16GB vs G Skill Intl F4-3200C16-16GVR 16GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

G Skill Intl F4-3200C16-16GVR 16GB

G Skill Intl F4-3200C16-16GVR 16GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

G Skill Intl F4-3200C16-16GVR 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GVR 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 63

左右 -125% 更低的延时
更快的读取速度，GB/s

17.4 8.1

测试中的平均数值
更快的写入速度，GB/s

14.6 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

G Skill Intl F4-3200C16-16GVR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 28
读取速度，GB/s

8.1 17.4
写入速度，GB/s

7.5 14.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1945 3563

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-16GVR 16GB

G Skill Intl F4-3200C16-16GVR 16GB

Kingston 9905469-124.A00LF 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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G Skill Intl F4-4133C19-8GTZKWC 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMA81GU6MFR8N-UH 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Kingston 9905471-002.A00LF 2GB

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Corsair CMSX64GX4M2A2666C18 32GB

Corsair CMSX64GX4M2A2666C18 32GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

Apacer Technology 78.A1GA0.9L4 2GB

Apacer Technology 78.A1GA0.9L4 2GB

Good Wealth Technology Ltd. KETECH 8GB

Good Wealth Technology Ltd. KETECH 8GB