Samsung M393B2G70BH0-YK0 16GB vs Micron Technology 16ATF2G64HZ-2G6E3 16GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

Micron Technology 16ATF2G64HZ-2G6E3 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6E3 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 63

左右 -85% 更低的延时
更快的读取速度，GB/s

15.8 8.1

测试中的平均数值
更快的写入速度，GB/s

12.4 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 34
读取速度，GB/s

8.1 15.8
写入速度，GB/s

7.5 12.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1945 2902

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M4 70T2953EZ3-CE6 1GB

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Panram International Corporation D4N2666PS-16G 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

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SK Hynix HMA41GR7AFR4N-TF 8GB

SK Hynix HMA41GR7AFR4N-TF 8GB