Samsung M393B2G70BH0-YK0 16GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

Micron Technology 4ATF51264AZ-3G2E1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-3G2E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

48 63

左右 -31% 更低的延时
更快的读取速度，GB/s

17.5 8.1

测试中的平均数值
更快的写入速度，GB/s

8.3 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 48
读取速度，GB/s

8.1 17.5
写入速度，GB/s

7.5 8.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1945 2196

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA82GS6DJR8N-XN 16GB

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Samsung M471B5673FH0-CF8 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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G Skill Intl F5-5600J4040C16G 16GB

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Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Kingston 99U5471-052.A00LF 8GB

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EVGA 8GX-D4-3200-MR 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

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Corsair CMW32GX4M2C3200C16 16GB