Samsung M393B2G70BH0-YK0 16GB vs Micron Technology 8ATF1G64AZ-3G2J1 8GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

Micron Technology 8ATF1G64AZ-3G2J1 8GB

Micron Technology 8ATF1G64AZ-3G2J1 8GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

Micron Technology 8ATF1G64AZ-3G2J1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2J1 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 63

左右 -117% 更低的延时
更快的读取速度，GB/s

15.8 8.1

测试中的平均数值
更快的写入速度，GB/s

12.2 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

Micron Technology 8ATF1G64AZ-3G2J1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 29
读取速度，GB/s

8.1 15.8
写入速度，GB/s

7.5 12.2
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1945 2988

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Essencore Limited IM4AGU88N26-GIIHMB 16GB

Essencore Limited IM4AGU88N26-GIIHMB 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston X74R9W-MIE 8GB

Kingston X74R9W-MIE 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 9905711-007.A00G 4GB

Kingston 9905711-007.A00G 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-2666C18-16GRS 16GB

G Skill Intl F4-2666C18-16GRS 16GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

G Skill Intl F4-3200C16-8GFX 8GB

G Skill Intl F4-3200C16-8GFX 8GB

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 99U5665-004.A00G 4GB

Kingston 99U5665-004.A00G 4GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Kingston KHX3333C16D4/8GX 8GB

Kingston KHX3333C16D4/8GX 8GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Corsair CMT32GX4M2C3200C14 16GB

Corsair CMT32GX4M2C3200C14 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB