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Samsung M393B2G70QH0-YK0 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB

Samsung M393B2G70QH0-YK0 16GB vs Crucial Technology 16G4UD2400.C16BD1 16GB

总分
star star star star star
Samsung M393B2G70QH0-YK0 16GB

Samsung M393B2G70QH0-YK0 16GB

总分
star star star star star
Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

差异 规格 评论

差异

Samsung M393B2G70QH0-YK0 16GB 需要考虑的原因
Samsung M393B2G70QH0-YK0 16GB
报告一个错误
Crucial Technology 16G4UD2400.C16BD1 16GB 需要考虑的原因
Crucial Technology 16G4UD2400.C16BD1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 63
    左右 -163% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 8.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 5.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70QH0-YK0 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 24
  • 读取速度，GB/s
    8.1 left arrow 15.5
  • 写入速度，GB/s
    5.8 left arrow 10.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1740 left arrow 2654

Samsung M393B2G70QH0-YK0 16GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
Mushkin 99[2/7/4]199F 8GB

Crucial Technology 16G4UD2400.C16BD1 16GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B2G70QH0-YK0 16GB
Samsung M393B2G70QH0-YK0 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3000C15-8GTZ 8GB
G Skill Intl F4-3000C15-8GTZ 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston 9965589-026.D00G 8GB
Kingston 9965589-026.D00G 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Kingston 99U5624-001.A00G 8GB
Kingston 99U5624-001.A00G 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Kingston KKRVFX-MIE 8GB
Kingston KKRVFX-MIE 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CB8GS2400.C8ET 8GB
Crucial Technology CB8GS2400.C8ET 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
A-DATA Technology AD4U240038G17-BHYA 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
内存RAM